Title :
Switching phenomena in reverse-biased gold-diffused silicon p+-i-n+diodes
Author :
Supadech, S. ; Heng, T.
Author_Institution :
King Mongkut´´s Institute of Technology, Bangkok, Thailand
fDate :
4/1/1979 12:00:00 AM
Abstract :
A novel mode of operation for a reverse-biased narrow i-region gold-diffused silicon p+-i-n+diode exhibiting switching negative resistance is reported. The i-region width is in the range of 12-16 µm, and gold has been used to generate deep trapping levels in the i-region.
Keywords :
Atomic layer deposition; Conductivity; Diodes; Fabrication; Gold; Impedance; Notice of Violation; P-n junctions; Silicon; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1979.11304
