• DocumentCode
    955797
  • Title

    Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and Transistors

  • Author

    Guggenbuehl, W. ; Strutt, J.O.

  • Author_Institution
    Dept. of Advanced Elec. Eng., Swiss Federal Inst. of Tech., Zurich, Switzerland
  • Volume
    45
  • Issue
    6
  • fYear
    1957
  • fDate
    6/1/1957 12:00:00 AM
  • Firstpage
    839
  • Lastpage
    854
  • Abstract
    This paper presents a general theory of junction diode and transistor shot noise in the region of low-level injection currents as dependent on frequency including lf and hf regions. Equations for noise figures in the three basic transistor connections are derived; these equations are believed to be new as well as in agreement with experimental results. Experimental curves at highlevel injection are presented. Coordination with previous theoretical and experimental data is shown to be satisfactory in the lf region. In the hf region, previous theoretical results, after proper adjustment, coincide with the present ones.
  • Keywords
    1f noise; Current density; Equations; Fluctuations; Frequency; Hafnium; Low-frequency noise; Semiconductor device noise; Semiconductor diodes; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1957.278483
  • Filename
    4056610