DocumentCode
955797
Title
Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and Transistors
Author
Guggenbuehl, W. ; Strutt, J.O.
Author_Institution
Dept. of Advanced Elec. Eng., Swiss Federal Inst. of Tech., Zurich, Switzerland
Volume
45
Issue
6
fYear
1957
fDate
6/1/1957 12:00:00 AM
Firstpage
839
Lastpage
854
Abstract
This paper presents a general theory of junction diode and transistor shot noise in the region of low-level injection currents as dependent on frequency including lf and hf regions. Equations for noise figures in the three basic transistor connections are derived; these equations are believed to be new as well as in agreement with experimental results. Experimental curves at highlevel injection are presented. Coordination with previous theoretical and experimental data is shown to be satisfactory in the lf region. In the hf region, previous theoretical results, after proper adjustment, coincide with the present ones.
Keywords
1f noise; Current density; Equations; Fluctuations; Frequency; Hafnium; Low-frequency noise; Semiconductor device noise; Semiconductor diodes; Semiconductor materials;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1957.278483
Filename
4056610
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