Title :
New n-channel m.o.s.f.e.t.s
Author :
Wakimoto, Tsutomu ; Matsumura, Masakiyo
Author_Institution :
Tokyo Institute of Technology, Faculty of Engineering, Tokyo, Japan
Abstract :
By using plasma c.v.d. and lift-off, an n-channel m.o.s.f.e.t. with effective channel length of 0.4 ¿m has been fabricated. Its main fabrication processes and obtained electrical characteristics are described.
Keywords :
chemical vapour deposition; insulated gate field effect transistors; plasma deposition; MOSFET; channel length; electrical characteristics; fabrication processes; plasma CVD;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800281
