Title :
Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures
Author :
Tomizawa, Masaaki ; Furuta, Tomofumi ; Yokoyama, Kiyoyuki ; Yoshi, Akira
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
11/1/1989 12:00:00 AM
Abstract :
Two-dimensionally quantized electron transport in modulation-doped double-heterojunction structures is investigated using a Monte Carlo simulation in which the energy quantization in a well is considered. Enhanced low-field mobility in the quantum well is observed with increased carrier density. This results from the reduction of optical phonon scattering rates, which can be attributed to the spread of two-dimensional electron gas. It is also demonstrated that carrier transport related to this enhancement and carrier confinement effectively contribute to device operation in a double-heterojunction FET.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier mobility; electron-phonon interactions; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; 2D quantized electron transport; AlGaAs-GaAs-AlGaAs double heterojunction structure; Monte Carlo simulation; carrier confinement; carrier density; double-heterojunction FET; energy quantization; low-field mobility; mobility enhancement; model; optical phonon scattering rates; quantum well; two-dimensional electron gas; Carrier confinement; Charge carrier density; Electron optics; Epitaxial layers; Gallium arsenide; Optical modulation; Optical scattering; Particle scattering; Phonons; Quantization;
Journal_Title :
Electron Devices, IEEE Transactions on
