Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d.

The first heteroepitaxy is reported of Ga0.47In0.53As on InP by low-pressure metalorganic chemical vapour deposition (m.o. c.v.d.). Triethylindium (t.e.i.) and triethylgallium (t.e.g) were used as group III sources, and arsine as the group V source. These Ga0.47In0.53As epilayers exhibit high electron mobility (7.74 cm2 V¿1 s¿1 for a total impurity concentration of 2.5 × 1016 cm¿3 at 300 K) and a photoluminescence efficiency comparable to l.p.e. layers. The lattice mismatch is only ¿a0/a0 ¿ 4 × 10¿4. Our mobility measurements indicate that m.o. c.v.d. Ga0.47In0.53As is a promising material for microwave device applications.