DocumentCode :
955896
Title :
Characteristics of an Indium-Tin Oxide Transparent Conductor Deposited from Organometallic Compositions
Author :
Siuta, Vincent ; Stein, Sidney J.
Author_Institution :
Electro Science Labs.,Inc.,Pennsauken, NJ
Volume :
1
Issue :
3
fYear :
1978
fDate :
9/1/1978 12:00:00 AM
Firstpage :
237
Lastpage :
241
Abstract :
The characteristics of an organometallic formulation are described that may be suitable for forming the transparent electrodes of liquid crystal and other displays directly by screen printing. When printed on glass and fired at approximately 550°C, a thin film of In2-x Snx O3-y semiconducting oxide approximately 2500 Å thick is obtained. The sheet resistance of the In2-x Snx O3-y film is about 1 k 
/ 
, and its optical transmission in the visible range is greater than 95 percent.
/ , and its optical transmission in the visible range is greater than 95 percent.Keywords :
Conducting films; Indium alloys/compounds, devices; Liquid crystal displays; Tin alloys/compounds, devices; Conductors; Electrodes; Glass; Liquid crystal displays; Optical films; Printing; Semiconductivity; Semiconductor films; Semiconductor thin films; Tin;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/TCHMT.1978.1135280
Filename :
1135280
Link To Document :
