• DocumentCode
    956009
  • Title

    Activation of low dose silicon implants in GaAs by multiply scanned electron beams

  • Author

    Shah, N.J. ; Ahmed, Hameeza ; Sanders, I.R. ; Singleton, J.F.

  • Author_Institution
    Cambridge University, Engineering Department, Cambridge, UK
  • Volume
    16
  • Issue
    11
  • fYear
    1980
  • Firstpage
    433
  • Lastpage
    434
  • Abstract
    Low dose implants of Si+ into semi-insulating GaAs have been annealed with the multiply scanned electron beam processing system. The activation of ions was about 55%, with a high peak concentration and a carrier mobility of 3800 cm2/Vs. The samples were unencapsulated and showed no surface degradation after annealing.
  • Keywords
    III-V semiconductors; annealing; electron beam applications; gallium arsenide; semiconductor doping; silicon; GaAs; III-V semiconductor; activation; annealing; carrier mobility; low dose Si implants; multiply scanned electron beam;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800302
  • Filename
    4244070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956009