Title :
Activation of low dose silicon implants in GaAs by multiply scanned electron beams
Author :
Shah, N.J. ; Ahmed, Hameeza ; Sanders, I.R. ; Singleton, J.F.
Author_Institution :
Cambridge University, Engineering Department, Cambridge, UK
Abstract :
Low dose implants of Si+ into semi-insulating GaAs have been annealed with the multiply scanned electron beam processing system. The activation of ions was about 55%, with a high peak concentration and a carrier mobility of 3800 cm2/Vs. The samples were unencapsulated and showed no surface degradation after annealing.
Keywords :
III-V semiconductors; annealing; electron beam applications; gallium arsenide; semiconductor doping; silicon; GaAs; III-V semiconductor; activation; annealing; carrier mobility; low dose Si implants; multiply scanned electron beam;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800302
