DocumentCode :
956039
Title :
Near-infra-red absorption using InGaAsP sources
Author :
Temkin, H. ; Chin, A.K.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Volume :
16
Issue :
11
fYear :
1980
Firstpage :
437
Lastpage :
439
Abstract :
The potential of InGaAsP light-emitting diodes (l.e.d.s) as light sources for quantitative absorption measurements in the 0.9¿1.6 ¿m region is discussed. Since a variety of chemicals, including atmospheric water vapour and pollutants such as CO2 and NO2 have absorption bands in the spectral region spanned by InGaAsP l.e.d.s, this technique is useful in evaluating impurity content. Detection of the atmospheric water vapour band centred at 1.38 ¿m is demonstrated. The application of this technique for assessing the OH content of optical fibres is also discussed.
Keywords :
III-V semiconductors; atmospheric measuring apparatus; gallium arsenide; indium compounds; light emitting diodes; Co2; InGaAsP LED; No2; OH content; atmospheric water vapour; optical fibres; quantitative absorption measurements;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800305
Filename :
4244073
Link To Document :
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