• DocumentCode
    956085
  • Title

    The Restructuring of Aluminum on Gallium Arsenide

  • Author

    Macpherson, Alan C. ; Day, Howard M.

  • Author_Institution
    Naval Research Lab.
  • Volume
    1
  • Issue
    4
  • fYear
    1978
  • fDate
    12/1/1978 12:00:00 AM
  • Firstpage
    432
  • Lastpage
    433
  • Abstract
    The restructuring of aluminum (Al) on GaAs has been observed on low-power GaAs field-effect transfers (FETs) and on special test structures. For 4 X 104heating and cooling cycles, temperature swings as low as 90°C produced restructuring. Restructuring is weakly dependent on deposition temperature, and no change in the Al resistance was observed.
  • Keywords
    Microwave FETs; Semiconductor device reliability; Aluminum; Cooling; FETs; Gallium arsenide; Heating; Optical films; Pulse measurements; Temperature; Testing; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1978.1135300
  • Filename
    1135300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956085