DocumentCode
956159
Title
Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes
Author
Bai, Xiaogang ; Mcintosh, Dion ; Liu, Handin ; Campbell, Joe C.
Author_Institution
Virginia Univ., Charlottesville
Volume
19
Issue
22
fYear
2007
Firstpage
1822
Lastpage
1824
Abstract
We report 4H-SiC avalanche photodiodes operated in Geiger mode for single photon detection at 265 nm. At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10-4. Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the absorbed photons are counted as avalanche events. The jitter of the photodiodes is also characterized.
Keywords
avalanche photodiodes; photodetectors; silicon compounds; Geiger-mode 4H-SiC avalanche photodiodes; SiC - Interface; dark count probability; jitter; single photon detection; ultraviolet single photon detection; wavelength 265 nm; Avalanche photodiodes; Dark current; Detectors; Electric breakdown; Helium; Jitter; Photodetectors; Silicon carbide; Temperature distribution; Voltage; Avalanche photodiodes; photodetector; silicon carbide; ultraviolet detector;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2007.906830
Filename
4367517
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