DocumentCode
956174
Title
X-Band High-Burnout Silicon-Schottky Mixer Diodes
Author
Anand, Yoginder ; Christou, Aristos ; Dietrich, Harry
Author_Institution
Microwave Associates
Volume
1
Issue
4
fYear
1978
fDate
12/1/1978 12:00:00 AM
Firstpage
340
Lastpage
344
Abstract
The development of a highly reliable thermal-compression bonded X-band silicon-Schottky barrier diode is described. A highburnout diode capable of handling peak RF power of 10-14 watts ( 
= 1 µs, 103 Hz) with a noise figure of 6.5-7.0 dB (SSB) was suceessfully demonstrated. These diodes are more rugged than whisker type point contact and Schottky-barrier devices and exhibit two to three times higher burnout resistance to RF pulses than Schottkybarrier diodes manufactured today. For this reason, they are very suitable for high-power military radar systems and especially useful for medium-power systems where limiters are not used to protect the mixer diodes.
= 1 µs, 103 Hz) with a noise figure of 6.5-7.0 dB (SSB) was suceessfully demonstrated. These diodes are more rugged than whisker type point contact and Schottky-barrier devices and exhibit two to three times higher burnout resistance to RF pulses than Schottkybarrier diodes manufactured today. For this reason, they are very suitable for high-power military radar systems and especially useful for medium-power systems where limiters are not used to protect the mixer diodes.Keywords
Microwave mixers; Schottky-barrier diodes; Semiconductor device bonding; Silicon devices; Thermocompression bonding; Bonding; Cable insulation; Circuits; Electronic packaging thermal management; Magnetic materials; Power system protection; Radar; Radio frequency; Schottky diodes; Temperature;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1978.1135309
Filename
1135309
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