DocumentCode :
956204
Title :
“Spiked” GaInP Quantum Wells for Shorter Red Wavelength Emission
Author :
Dumitrescu, M. ; Toikkanen, L. ; Laakso, A. ; Tukiainen, A. ; Rimpiläinen, V. ; Pessa, M.
Author_Institution :
Tampere Univ. of Technol., Tampere
Volume :
19
Issue :
22
fYear :
2007
Firstpage :
1819
Lastpage :
1821
Abstract :
Compositional and strain limitations are often restricting the emission wavelength from quantum-well (QW) lasers. The letter presents simulation and experimental results on the effects of including thin higher bandgap layers into GalnP QWs emitting in the short red wavelength range. These were considered "spiked" single QWs since the thin higher bandgap layers used in our studies varied in composition and led to carrier wavefunctions that are like perturbed single QW wavefunctions rather than wavefunctions of coupled QWs. The edge-emitting lasers having up to four-monolayer AlGalnP "spikes" in the QWs had an emission blueshift of up to 25 nm, whereas the degradation of other laser characteristics was in line with the degradation observed when similar emission blueshift was generated by conventional QW modification.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; quantum well lasers; semiconductor quantum wells; spectral line shift; GaInP; blueshift; carrier wavefunctions; edge-emitting lasers; quantum-well lasers; red wavelength emission; spiked GaInP quantum wells; thin higher bandgap layers; Capacitive sensors; Degradation; Energy states; Multilevel systems; Optical materials; Photonic band gap; Power engineering and energy; Quantum well lasers; Semiconductor lasers; Wavelength measurement; GaInP–AlGaInP semiconductor lasers; perturbed quantum wells (QWs); short red wavelength range;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2007.906845
Filename :
4367521
Link To Document :
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