Title :
Relationship between power added efficiency and gate-drain avalanche in GaAs m.e.s.f.e.t.s
Author :
Wemple, S.H. ; Steinberger, M.L. ; Schlosser, W.O.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Pulse avalanche measurements in the transistor three-terminal configuration reveal a correlation between pulse gate-drain avalanche and power added efficiency. This result, in conjunction with earlier work, points to simple design principles that can be used to maximise efficiency.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; GaAs MESFET; III-V semiconductors; gate drain avalanche; power MESFET; power added efficiency; pulse avalanche measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800323
