Title :
2.5 Gb/s laser-driver GaAS IC
Author_Institution :
Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
fDate :
7/1/1993 12:00:00 AM
Abstract :
A laser-diode driver GaAs IC incorporating an optional NRZ/RZ (non-return-to-zero/return-to-zero) conversion facility, having ECL (emitter-coupled logic) and SCFL (source-coupled FET logic)-compatible inputs and providing a 0-60-mA adjustable output current into a 50-Ω/5-V termination at bit rates up to 2 Gb/s NRZ and maintaining a clear eye opening of 50 mA at 2.5 Gb/s NRZ bit rate has been designed, using a commercial 1-μm gate-length (Fτ=12 GHz) GaAs MESFET foundry service. The high maximum output current is obtained by implementing the output driver as a cascode differential amplifier. The logic circuitry implemented using a novel, DCAL (diode-clamped active-load) SCFL family, which is based on gate-width scaling rather than on absolute values, so that the on-chip logic voltage swing is less sensitive to process variations than conventional SCFL. A 60% improvement in noise margin is also obtained. To verify laser driving performance a back-to-back optical-fiber transmission experiment was performed, giving good optical eye diagrams at 2.5 Gb/s. The electrooptical interplay between laser-diode driver and laser-diode has been demonstrated using SPICE simulations
Keywords :
III-V semiconductors; driver circuits; emitter-coupled logic; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; power integrated circuits; semiconductor lasers; 0 to 60 mA; 2.5 Gbit/s; GaAs MESFET foundry service; SPICE simulations; adjustable output current; back-to-back optical-fiber transmission experiment; cascode differential amplifier; clear eye opening; diode-clamped active-load; electrooptical interplay; emitter-coupled logic; gate-length; gate-width scaling; laser driver GaAs integrated circuit; laser driving performance; logic circuitry; maximum output current; noise margin; nonreturn to zero/return to zero conversion facility; on-chip logic voltage swing; optical eye diagrams; source coupled field effect transistor logic compatible inputs; termination; Bit rate; FET integrated circuits; Gallium arsenide; Laser noise; Lasers and electrooptics; Logic circuits; MESFET integrated circuits; Optical noise; Optical sensors; Optical signal processing;
Journal_Title :
Lightwave Technology, Journal of