Title :
Impact ionisation in multilayered heterojunction structures
Author :
Chin, Richard ; Holonyak, Nick ; Stillman, G.E. ; Tang, Jean Y. ; Hess, K.
Author_Institution :
University of Illinois at Urbana-Champaign, Department of Electrical Engineering & Materials Research Laboratory, Urbana, USA
Abstract :
Calculations are reported showing that in multilayered heterojunction structures the effective impact ionisation rates for electrons and holes can be very different, even if they are the same in the basic bulk materials. The reason for this is the difference in the band-edge discontinuities for electrons and holes and the lower phonon mean free path for holes in quantum well structures.
Keywords :
carrier mean free path; impact ionisation; p-n heterojunctions; impact ionisation; mean free path; multilayered heterojunction structures; quantum well structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800329
