Title :
Improved Electrical Characteristics and Reliability of MILC Poly-Si TFTs Using Fluorine-Ion Implantation
Author :
Chang, Chih-Pang ; Wu, YewChung Sermon
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high on/off-current ratio. F+-implanted MILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.
Keywords :
crystallisation; elemental semiconductors; fluorine; ion implantation; semiconductor device reliability; silicon; thin film transistors; MILC; Si - Element; electrical characteristics; fluorine ion implantation; high field effect mobility; hot carrier stress; low subthreshold slope; low threshold voltage; manufacturing process; metal induced lateral crystallization; poly-Si TFT; polycrystalline-silicon thin-film transistors; reliability; trap-state density; Annealing; Crystallization; Electric variables; Fabrication; Glass; Hot carriers; Manufacturing processes; Plasma temperature; Thin film transistors; Threshold voltage; Fluorine-ion implantation; metal-induced lateral crystallization (MILC); polycrystalline-silicon thin-film transistors (poly-Si TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.906803
