A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels

Author

Chang, Chia-Wen ; Deng, Chih-Kang ; Chang, Hong-Ren ; Chang, Che-Lun ; Lei, Tan-Fu

Author_Institution

Nat. Chiao-Tung Univ., Hsinchu

Volume

28

Issue

11

fYear

2007

Firstpage

993

Lastpage

995

Abstract

In this letter, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels, which are fabricated without advanced photolithography by using a sidewall spacer-formation technique, are proposed for the first time. Because the polygate electrode is perpendicularly across poly-Si NW channels to form a trigatelike structure, the proposed poly-Si NW TFT owns outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.

Keywords

electrodes; nanowires; silicon; thin film transistors; Si - Interface; nanowire channels; poly-Si NW channels; poly-Si TFT; polycrystalline-silicon thin-film transistors; polygate electrode; sidewall spacer-formation technique; size 50 nm; spacer technique; Controllability; Displays; Electrodes; Glass; Lithography; Manufacturing; Silicon; Substrates; Thin film circuits; Thin film transistors; Nanowire (NW); polycrystalline silicon (poly-Si); sidewall spacer; thin-film transistors (TFTs); trigatelike structure;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.906808

Filename

4367541