• DocumentCode
    956418
  • Title

    GaAs MESFET demodulates gigabit signal rates from GaAlAs injection laser

  • Author

    Osterwalder, J.M. ; Rickett, B.J.

  • Author_Institution
    General Dynamics Electronics Division, San Diego, CA
  • Volume
    67
  • Issue
    6
  • fYear
    1979
  • fDate
    6/1/1979 12:00:00 AM
  • Firstpage
    966
  • Lastpage
    968
  • Abstract
    This letter describes the experimental results of an optical transmission link with modulation rates up to 4 GHz. The transmitter consists of an FET driven GaAlAs injection laser emitting at a 8500 Å wavelength. The receiver makes use of a GaAs MESFET chip which is compared with a standard silicon avalanche photodiode demodulator.
  • Keywords
    Avalanche photodiodes; Demodulation; FETs; Gallium arsenide; MESFETs; Optical modulation; Optical receivers; Optical transmitters; Silicon; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1979.11368
  • Filename
    1455637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956418