Title :
High efficiency GaAs Schottky-barrier gate f.e.t. oscillator
Author :
Sautereau, J.F. ; Graffeuil, J. ; Tantrarongroj, K. ; Rossel, P.
Author_Institution :
Université Paul Sabatier/CNRS, LAAS, GRECO Microondes, Toulouse, France
Abstract :
A high efficiency high p.p.d. GaAs f.e.t. oscillator was developed. An output power of 63 mW with an efficiency of 39.7% and a p.p.d. of 0.21 mW/¿m was easily produced at 9.3 GHz using a HP FET 1101 A-HPAC 100 A. The design of this oscillator was effected using a large signal method by means of a time-domain analysis program IMAG III, which computes the transient response of a nonlinear f.e.t. network.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; GaAs Schottky barrier gate FET oscillator; efficiency; large signal method; microwave; nonlinear FET network; output power; peripherical power density; time domain analysis program; transient response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800342
