DocumentCode :
956481
Title :
Metal–Oxide–High- 
Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications
Author :
Hsu, Hsin-Hao ; Chang, Ingram Yin-ku ; Lee, Joseph Ya-min
Author_Institution :
Tsing-Hua Univ., Hsinchu
Volume :
28
Issue :
11
fYear :
2007
Firstpage :
964
Lastpage :
966
Abstract :
Metal-oxide-high-kappa dielectric-oxide-silicon capacitors and transistors are fabricated using HfO2 and Dy2O3 high-kappa dielectrics as the charge storage layer. The programming speed of Al/SiO2/Dy2O3/ SiO2/Si transistor is characterized by a DeltaV th shift of 1.0 V with a programming voltage of 12 V applied for 10 ms. As for retention properties, the Al/SiO2/Dy2O3/ SiO2/Si transistors can keep a DeltaV th window of 0.5 V for 2 times108 s. The corresponding numbers for Al/ SiO2/HfO2/SiO2/Si transistors are 100 ms and 2 times104 s, respectively. The better performance of the Al/SiO2/Dy2O3/ SiO2/Si transistors is attributed to the larger conduction band offset at the Dy2O3/SiO2 interface.
Keywords :
MOS capacitors; aluminium; dysprosium compounds; field effect transistors; hafnium compounds; high-k dielectric thin films; integrated memory circuits; silicon compounds; Al-SiO2-Dy2O3-SiO2-Si; Al-SiO2-Dy2O3-SiO2-Si - Interface; HfO2; HfO2 - Binary; MOHOS capacitors; charge storage layer; field effect transistors; memory applications; metal oxide high k dielectric oxide semiconductor capacitors; time 10 ms; voltage 12 V; Annealing; Argon; Capacitors; Chemicals; Dielectric substrates; FETs; Hafnium oxide; Oxidation; SONOS devices; Voltage; $hbox{Dy}_{2}hbox{O}_{3}$ $hbox{HfO}_{2}$ $kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.906797
Filename :
4367549
Link To Document :
