Title :
Improving the Electrical Properties of NILC Poly-Si Films Using a Gettering Substrate
Author :
Hu, Chen-Ming ; Wu, YewChung Sermon ; Lin, Chi-Ching
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate poly-crystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using alpha-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film, both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.
Keywords :
amorphous semiconductors; elemental semiconductors; getters; leakage currents; nickel compounds; silicon; thin film transistors; NILC poly-Si films; Ni-metal impurity; Ni-metal-induced lateral crystallization; NiSi2 - Binary; amorphous silicon; electrical properties; gettering substrate; leakage current; poly-crystalline silicon thin-film transistors; Annealing; Contamination; Crystallization; Etching; Gettering; Leakage current; Semiconductor films; Substrates; Temperature; Thin film transistors; Gettering; Ni-metal-induced lateral crystallization (NILC); thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.907267
