Title :
Low threshold current transverse junction lasers on semi-insulating substrates by m.b.e.
Author :
Lee, T.P. ; Burrus, C.A. ; Cho, A.Y.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Preparation by m.b.e. of GaAs-AlxGa1¿xAs transverse junction lasers on semi-insulating substrates is described. Pulsed current thresholds of 32 mA have been achieved at room temperature (25°C) in initial devices. Single-mode c.w. operation has been achieved with heat-sink temperatures up to 35°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; current transverse junction lasers; molecular beam epitaxy; pulsed current threshold; semi insulating substrate; single mode CW operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800356
