DocumentCode :
956645
Title :
Novel active-R ideal frequency-dependent negative-resistance simulation
Author :
Nandi, R.
Author_Institution :
Jadavpur University, Calcutta, India
Volume :
67
Issue :
7
fYear :
1979
fDate :
7/1/1979 12:00:00 AM
Firstpage :
1080
Lastpage :
1080
Abstract :
A novel structure for the simulation of an ideal frequency-dependent negative-resistance (FDNR) element based on the single-pole rolloff characteristics of the operational amplifier is reported. The structure uses only operational amplifiers and a resistor.
Keywords :
Capacitance; Capacitors; Circuit simulation; Electrons; Frequency; Impedance; Inductance; Operational amplifiers; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1979.11393
Filename :
1455662
Link To Document :
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