Title :
Broadband varactor-tuned GaAs f.e.t. oscillator
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
A broadband varactor-tuned GaAs f.e.t. oscillator (7.4 to 13.1 GHz) is presented, together with measured and predicted performance characteristics. The circuit uses tuning in series with both the gate and the source leads of the device to maintain optimum oscillation conditions across the band.
Keywords :
field effect transistor circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; varactors; variable-frequency oscillators; 7.4 to 13.1 GHz; broadband varactor tuned GaAs FET oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800372
