Title :
5 GHz binary frequency division on GaAs
Author :
Cathelin, M. ; Durand, G. ; Gavant, M. ; Rocchi, M.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
A fully planar self-aligned technology with a standard photolithographic process has been used to fabricate binary frequency dividers on GaAs counting correctly from d.c. to over 5 GHz, which is the best performance so far on such circuits. The divider is an optimised version of the gated T master/slave flip-flop. The m.e.s.f.e.t.´s gates are 0.6 ¿m within 2 ¿m drain-source spacing.
Keywords :
digital integrated circuits; flip-flops; frequency dividers; 5 GHz binary frequency division; GaAs; MESFET gates; frequency dividers; fully planar self aligned technology; gated T master/slave flip flop; photolithographic process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800373
