• DocumentCode
    956718
  • Title

    5 GHz binary frequency division on GaAs

  • Author

    Cathelin, M. ; Durand, G. ; Gavant, M. ; Rocchi, M.

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    16
  • Issue
    14
  • fYear
    1980
  • Firstpage
    535
  • Lastpage
    536
  • Abstract
    A fully planar self-aligned technology with a standard photolithographic process has been used to fabricate binary frequency dividers on GaAs counting correctly from d.c. to over 5 GHz, which is the best performance so far on such circuits. The divider is an optimised version of the gated T master/slave flip-flop. The m.e.s.f.e.t.´s gates are 0.6 ¿m within 2 ¿m drain-source spacing.
  • Keywords
    digital integrated circuits; flip-flops; frequency dividers; 5 GHz binary frequency division; GaAs; MESFET gates; frequency dividers; fully planar self aligned technology; gated T master/slave flip flop; photolithographic process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800373
  • Filename
    4244144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956718