Advanced development process for ultrafine photoresist patterns

Author

Shimada, Hiroki ; Onodera, M. ; Nonaka, Tomomi ; Hirose, Keikichi ; Ohmi, Tadahiro

Author_Institution

Dept. of Electron., Tohoku Univ., Sendai

Volume

6

Issue

3

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

269

Lastpage

273

Abstract

Addition of appropriate surfactant to developer will improve wettability of the developer, thus promoting uniformity of dissolution of exposed photoresist. Surface smoothness of the Si substrate is also improved when developer contains surfactant. The only disadvantage is that surfactant is adsorbed onto the wafer surface; however, it can be removed by a Pt-H₂O₂ treatment without degrading the photoresist pattern. The optimal tetramethylammonium hydroxide (TMAH) concentration in the developer was investigated by measuring the developing selectivity of the photoresist against various TMAH concentration levels. The developing selectivity is considered to directly affect the photoresist profile and resolution in the development process

Keywords

photoresists; surface treatment; Si substrate; TMAH concentration levels; photoresist pattern; selectivity; surfactant; tetramethylammonium hydroxide; ultrafine photoresist patterns; wettability; Chemical processes; Degradation; Lithography; Resists; Rough surfaces; Semiconductor devices; Silicon; Substrates; Surface roughness; Surface treatment;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.238177

Filename

238177