DocumentCode
956774
Title
Bit synchronisation in Gbit/s range using dual gate GaAs m.e.s.f.e.t.s
Author
Beneking, H. ; Filensky, W. ; Ponse, F.
Author_Institution
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Volume
16
Issue
14
fYear
1980
Firstpage
543
Lastpage
544
Abstract
Bit synchronisation at 1 and 2 Gbit/s including pulse width reduction is achieved using dual gate GaAs m.e.s.f.e.t.s. Circuits and time behaviour of input-, clock- and output signals are shown.
Keywords
Schottky gate field effect transistors; field effect transistor circuits; pulse shaping circuits; synchronisation; Gbit/s range; bit synchronisation; clock signals; dual gate GaAs MESFET; input signals; output signals; time behaviour;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800378
Filename
4244149
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