Title :
Differentiation of source/drain breakdown mechanisms by a single ring transistor measurment
Author :
Dunn, Douglas E.
Author_Institution :
Dept. of Electr. & Electron. Eng., North Dakota State Univ., Fargo, ND, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
A measurement technique using a single device to differentiate the effects of junction curvature, surface fields, and isolation implants in MOS source/drain breakdown is described. This use of a single device may complement existing measurement techniques, or be useful for design of test structures in the streets (scribe channels), where the number of devices is pad limited
Keywords :
MOS integrated circuits; electric breakdown of solids; integrated circuit testing; MOS breakdown; isolation implants; junction curvature; pad limited; scribe channels; single ring transistor measurment; source/drain breakdown mechanisms; surface fields; test structures; Electric breakdown; Implants; Measurement techniques; Microwave integrated circuits; Neodymium; Semiconductor diodes; Substrates; Surface finishing; Testing; Transistors;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
