DocumentCode
956789
Title
Trends and limits in monolithic integration by increasing the die area
Author
Warwick, Colin A. ; Ourmazd, Abbas
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
6
Issue
3
fYear
1993
fDate
8/1/1993 12:00:00 AM
Firstpage
284
Lastpage
289
Abstract
The authors consider the limits on growing the die area, and argue that they are essentially economic. The discussion is in terms of a simple system-cost model. At a given defect density, the optimum die area is determined by the balance between reducing the assembly cost, achieved by growing the die to bring interconnects on chip, and reducing the scrapping cost, achieved by shrinking the die to reduce the amount of processed Si lost every time defects occur. The author´s model accurately reproduces past trends, and predicts the die area which minimizes the cost of a system of given complexity. Extrapolation of present trends indicates that the economic advantage of growing the die may be exhausted at die areas of ~8-20 cm2. Dice with such an area may be encountered by the year 2010, when fundamental limits on miniaturization are also anticipated
Keywords
integrated circuit technology; microassembling; monolithic integrated circuits; assembly cost; defect density; die area; economic advantage; miniaturization; monolithic integration; scrapping cost; system-cost model; Area measurement; Breakdown voltage; Doping profiles; Electric breakdown; Implants; Metalworking machines; Monolithic integrated circuits; Process design; Semiconductor diodes; Voltage measurement;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.238182
Filename
238182
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