• DocumentCode
    956789
  • Title

    Trends and limits in monolithic integration by increasing the die area

  • Author

    Warwick, Colin A. ; Ourmazd, Abbas

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    6
  • Issue
    3
  • fYear
    1993
  • fDate
    8/1/1993 12:00:00 AM
  • Firstpage
    284
  • Lastpage
    289
  • Abstract
    The authors consider the limits on growing the die area, and argue that they are essentially economic. The discussion is in terms of a simple system-cost model. At a given defect density, the optimum die area is determined by the balance between reducing the assembly cost, achieved by growing the die to bring interconnects on chip, and reducing the scrapping cost, achieved by shrinking the die to reduce the amount of processed Si lost every time defects occur. The author´s model accurately reproduces past trends, and predicts the die area which minimizes the cost of a system of given complexity. Extrapolation of present trends indicates that the economic advantage of growing the die may be exhausted at die areas of ~8-20 cm2. Dice with such an area may be encountered by the year 2010, when fundamental limits on miniaturization are also anticipated
  • Keywords
    integrated circuit technology; microassembling; monolithic integrated circuits; assembly cost; defect density; die area; economic advantage; miniaturization; monolithic integration; scrapping cost; system-cost model; Area measurement; Breakdown voltage; Doping profiles; Electric breakdown; Implants; Metalworking machines; Monolithic integrated circuits; Process design; Semiconductor diodes; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.238182
  • Filename
    238182