Title :
Dual gate GaAs m.e.s.f.e.t. phase shifter with gain at 12 GHz
Author :
Tsironis, Christos ; Harrop, Peter
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
A dual gate m.e.s.f.e.t. phase shifter is described with 4 dB insertion gain at 12 GHz and more than 100° linear continuous phase shift as a function of the d.c. voltage applied to the controlling gate electrode.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; phase shifters; solid-state microwave circuits; 12 GHz; 4 dB insertion gain; dual gate GaAs MESFET phase shifter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800384
