DocumentCode
956850
Title
Dual gate GaAs m.e.s.f.e.t. phase shifter with gain at 12 GHz
Author
Tsironis, Christos ; Harrop, Peter
Author_Institution
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Volume
16
Issue
14
fYear
1980
Firstpage
553
Lastpage
554
Abstract
A dual gate m.e.s.f.e.t. phase shifter is described with 4 dB insertion gain at 12 GHz and more than 100° linear continuous phase shift as a function of the d.c. voltage applied to the controlling gate electrode.
Keywords
Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; phase shifters; solid-state microwave circuits; 12 GHz; 4 dB insertion gain; dual gate GaAs MESFET phase shifter;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800384
Filename
4244155
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