DocumentCode :
956852
Title :
An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime
Author :
Bellone, Salvatore ; Licciardo, Gian Domenico ; Guerriero, Gabriele ; Rubino, Alfredo
Author_Institution :
Univ. of Salerno, Salerno
Volume :
54
Issue :
11
fYear :
2007
Firstpage :
2998
Lastpage :
3006
Abstract :
A model of a new technique to measure the spatial distribution of the majority and minority carrier lifetime along epilayers is presented. Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of the measured quantities.
Keywords :
voltage measurement; OCVD-based measurement technique; carrier recombination lifetime; local carrier lifetime; open-circuit voltage decay; spatial distribution; Analytical models; Charge carrier lifetime; Diodes; Measurement techniques; Plasma measurements; Radiative recombination; Semiconductor materials; Spatial resolution; Testing; Voltage measurement; Carrier recombination lifetime; lifetime profile; measurement technique; modeling; negative resistance; open-circuit voltage decay (OCVD);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.907162
Filename :
4367586
Link To Document :
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