DocumentCode :
956886
Title :
Universal Method for Extracting Transport Parameters From Monte Carlo Device Simulation
Author :
Brugger, Simon C. ; Schenk, Andreas
Author_Institution :
Swiss Fed. Inst. of Technol. Zurich, Zurich
Volume :
54
Issue :
11
fYear :
2007
Firstpage :
3092
Lastpage :
3096
Abstract :
The extraction of transport parameters as mobilities and diffusivities has been a subject of research for more than 20 years. However, the solutions proposed up to now are not satisfactory particularly when applied to nanoscale devices. In this brief, we review the two most popular methods to extract mobilities and show how they fail in nanoscale devices, where transport is strongly quasi-ballistic. We also show that these methods are not appropriate to extract tensorial transport parameters. As an alternative, we propose to use recently derived general definitions of mobilities and diffusivities that naturally solve these problems and, thus, constitute a universal method to extract transport parameters.
Keywords :
Monte Carlo methods; ballistic transport; carrier mobility; nanoelectronics; semiconductor device models; Monte Carlo device simulation; diffusivity tensor; generalized drift-diffusion equation; inverse scattering operator; mobility tensor; nanoscale devices; quasi-ballistic transport; tensorial transport parameters; transport parameters extraction; Boltzmann equation; Electron mobility; Genetic expression; Helium; Inverse problems; Laboratories; Monte Carlo methods; Nanoscale devices; Boltzmann equation; device simulation; generalized drift–diffusion equation; inverse scattering operator; transport parameters;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.906937
Filename :
4367589
Link To Document :
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