DocumentCode
956896
Title
Temperature dependence of the coercive field in MnBi single crystals
Author
Stutius, W. ; Chen, Tu
Author_Institution
Xerox Palo Alto Research Center, Palo Alto, California
Volume
11
Issue
5
fYear
1975
fDate
9/1/1975 12:00:00 AM
Firstpage
1388
Lastpage
1390
Abstract
The temperature dependence of ihe coercive field was measured on low-temperature phase MnBi single crystals between room-temperature and the Curie point. The wall-nucleation field Hn increases more than one order of magnitude over this temperature range and values for Hn as high at 6-10 kOe were observed. This dependence of Hn on temperature is reversible with thermal cycling and the transition from a wall-motion-type hysteresis to a nucleation-type hysteresis is attributed to a temperature-dependent concentration of defects in the material. The results are compared with recent work on polycrystalline MnBi thin films and single crystal platelets.
Keywords
Coercive forces; Magnetic domains; Magnetic thermal factors; Magnetization reversal; Magnetooptic materials/devices; Coercive force; Crystals; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Magnetic materials; Perpendicular magnetic anisotropy; Saturation magnetization; Temperature dependence; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1975.1058892
Filename
1058892
Link To Document