• DocumentCode
    956896
  • Title

    Temperature dependence of the coercive field in MnBi single crystals

  • Author

    Stutius, W. ; Chen, Tu

  • Author_Institution
    Xerox Palo Alto Research Center, Palo Alto, California
  • Volume
    11
  • Issue
    5
  • fYear
    1975
  • fDate
    9/1/1975 12:00:00 AM
  • Firstpage
    1388
  • Lastpage
    1390
  • Abstract
    The temperature dependence of ihe coercive field was measured on low-temperature phase MnBi single crystals between room-temperature and the Curie point. The wall-nucleation field Hnincreases more than one order of magnitude over this temperature range and values for Hnas high at 6-10 kOe were observed. This dependence of Hnon temperature is reversible with thermal cycling and the transition from a wall-motion-type hysteresis to a nucleation-type hysteresis is attributed to a temperature-dependent concentration of defects in the material. The results are compared with recent work on polycrystalline MnBi thin films and single crystal platelets.
  • Keywords
    Coercive forces; Magnetic domains; Magnetic thermal factors; Magnetization reversal; Magnetooptic materials/devices; Coercive force; Crystals; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Magnetic materials; Perpendicular magnetic anisotropy; Saturation magnetization; Temperature dependence; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1975.1058892
  • Filename
    1058892