Title :
Evidence for alloy scattering from pressure-induced changes of electron mobility in In1¿xGaxAsyP1¿y
Author :
Adams, A.R. ; Tatham, H.L. ; Hayes, J.R. ; El-Sabbahy, A.N. ; Greene, P.D.
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
The electron mobility in the quaternary alloy In1¿xGaxAsyP1¿y has been measured at pressures up to 16 kbar which produce significant changes in the effective mass. Both the pressure dependence and the temperature dependence indicate that alloy scattering has a strong influence on the electron mobility.
Keywords :
III-V semiconductors; carrier mobility; effective mass (band structure); gallium arsenide; gallium compounds; indium compounds; piezoresistance; 16 kbar; In1-xGaxAsyP1-y; alloy scattering; effective mass; electron mobility; pressure dependence; pressure induced changes; quaternary alloy; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800389
