• DocumentCode
    956932
  • Title

    Electrical conduction in metal/implanted SiO2/Si structures

  • Author

    Ragaie, H.F.

  • Author_Institution
    EFCIS, Direction de Recherche el D´eveloppement, Grenoble, France
  • Volume
    16
  • Issue
    14
  • fYear
    1980
  • Firstpage
    565
  • Lastpage
    566
  • Abstract
    Direct current/voltage relationships for m.o.s. capacitors are measured as function of oxide doping. Uniform P+ doping is obtained by means of multiple ion implantation. A close relationship between oxide defects, conduction and memory switching is then emphasised.
  • Keywords
    electrical conductivity transitions; ion implantation; metal-insulator-semiconductor structures; silicon; silicon compounds; MOS capacitors; P+ doping; current voltage relationships; electrical conduction; memory switching; metal/implanted SiO2/Si structures; multiple ion implantation; oxide defects; oxide doping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800392
  • Filename
    4244163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956932