DocumentCode
956964
Title
Analytical Expression for the Bias and Frequency-Dependent Capacitance of MOS Varactors
Author
Gildenblat, G. ; Zhu, Z. ; Wu, W.
Author_Institution
Arizona State Univ., Tempe
Volume
54
Issue
11
fYear
2007
Firstpage
3107
Lastpage
3108
Abstract
Relaxation time approximation is used to obtain an analytical expression for the frequency dependence of the capacitance of MOS varactors that are associated with the inertia of inversion layer formation.
Keywords
MOS capacitors; capacitance; inversion layers; semiconductor device models; varactors; MOS varactors; analytical expression; bias-dependent capacitance; frequency-dependent capacitance; inversion layer formation; relaxation time approximation; Capacitance; Channel bank filters; Circuit simulation; Equations; Frequency dependence; Frequency response; Helium; Microscopy; Varactors; Voltage; Frequency dependence; MOS varactor; relaxation time approximation (RTA);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.907134
Filename
4367597
Link To Document