Title :
Analytical Expression for the Bias and Frequency-Dependent Capacitance of MOS Varactors
Author :
Gildenblat, G. ; Zhu, Z. ; Wu, W.
Author_Institution :
Arizona State Univ., Tempe
Abstract :
Relaxation time approximation is used to obtain an analytical expression for the frequency dependence of the capacitance of MOS varactors that are associated with the inertia of inversion layer formation.
Keywords :
MOS capacitors; capacitance; inversion layers; semiconductor device models; varactors; MOS varactors; analytical expression; bias-dependent capacitance; frequency-dependent capacitance; inversion layer formation; relaxation time approximation; Capacitance; Channel bank filters; Circuit simulation; Equations; Frequency dependence; Frequency response; Helium; Microscopy; Varactors; Voltage; Frequency dependence; MOS varactor; relaxation time approximation (RTA);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.907134
