High bit rate modulation of narrow-stripe proton-implanted GaAs/GaAlAs injection lasers

High bit rate modulation up to 2 Gbit/s of a narrow -stripe (3 ¿m) proton-implanted injection laser using resonance oscillation has been achieved. These results indicate that the narrow-stripe laser has possibilities of high bit rate modulation comparable to the broad-stripe laser. To obtain optimum modulation conditions, pulse height distortion was studied for various bias and pulse currents. Optimum was found for a bias current 5% above threshold and a pulse current of 42 mA in a laser with a threshold current of 111 mA.