Title :
CW operation of corner cavity semiconductor lasers
Author :
Smith, S.D. ; Fitz, J.L. ; Whisnant, J.K.
Author_Institution :
Lab. for Phys. Sci., College Park, MD, USA
Abstract :
Etched facet semiconductor lasers have been fabricated and tested under CW operating conditions. The lasers consist of stripes formed by proton implantation, a total internal reflection (TIR) corner, and an output coupling facet. Devices with a variety of output coupling geometries were fabricated. Laser threshold currents and spectral characteristics were measured. Threshold current levels of devices with several different aperture sizes are compared to those of structures with standard Fabry-Perot reflectors.<>
Keywords :
laser accessories; laser beams; laser cavity resonators; optical workshop techniques; semiconductor lasers; CW operation; corner cavity semiconductor lasers; etched facet lasers; laser threshold currents; output coupling facet; proton implantation; spectral characteristics; total internal reflection corner; Apertures; Current measurement; Etching; Geometrical optics; Optical coupling; Optical reflection; Protons; Semiconductor device testing; Semiconductor lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
