Title :
Ideality and noise figure characteristics of r.f. sputtered millimetre GaAs diodes
Author :
Anand, Y. ; Christou, Alex ; Day, H.
Author_Institution :
Microwave Associates, Burlington, USA
Abstract :
Refractory Schottky barriers have been incorporated in millimetre GaAs mixer diodes to improve r.f. performance and burnout resistance. It is shown that low power r.f. sputter deposition of TiW and Ti-Mo refractories results in degradation of noise temperature ratio and to a first approximation does not affect d.c. parameters, especially the ideality factor.
Keywords :
III-V semiconductors; Schottky-barrier diodes; electron device noise; gallium arsenide; mixers (circuits); radiofrequency sputtering; solid-state microwave devices; DC parameters; RF sputtered millimetre GaAs diodes; Ti-Mo refractories; TiW; burnout resistance; ideality factor; microwave; mixer diodes; noise figure characteristics; noise temperature ratio; refractory Schottky barriers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800403
