2.4-μm-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications

Author

Refaat, Tamer F. ; Abedin, M. Nurul ; Sulima, Oleg V. ; Ismail, Syed ; Singh, Upendra N.

Author_Institution

Old Dominion Univ., Norfolk

Volume

54

Issue

11

fYear

2007

Firstpage

2837

Lastpage

2842

Abstract

Shortwave-infrared (IR) detectors are critical for several applications, including remote sensing and optical communications. Several detectors are commercially available for this wavelength range, but they lack sufficient gain that limits their detectivity. The characterization results of AlGaAsSb/InGaAsSb phototransistors for shortwave-IR application are reported. The phototransistors are grown using molecular beam epitaxy technique. Spectral-response measurements showed a uniform responsivity between 1.2- and 2.4- region with a mean value of 1000 A/W. A maximum detectivity of was obtained at 2 at and 1.3 V.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; phototransistors; AlGaAsSb-InGaAsSb - Interface; molecular beam epitaxy technique; optical communications; phototransistors; remote sensing; shortwave-IR applications; shortwave-infrared detectors; size 2.4 mum; spectral-response measurements; voltage 1.3 V; wavelength 1.2 micron to 2.4 micron; Heterojunctions; Infrared detectors; Molecular beam epitaxial growth; NASA; Optical fiber communication; Phototransistors; Remote sensing; Signal to noise ratio; Temperature; Wavelength measurement; Characterization; heterojunction; infrared (IR); phototransistor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.907145

Filename

4367611