Title :
Transform-limited picosecond optical pulses from a mode-locked InGaAs/AlGaAs QW laser with integrated passive waveguide cavity and QW modulator
Author :
Brovelli, L.R. ; Germann, R. ; Reithmaier, J.P. ; Jäckel, H. ; Meier, H.P. ; Melchior, H.
Author_Institution :
Inst. of Quantum Electron., ETH, Zurich, Switzerland
Abstract :
Using a novel single-top molecular beam epitaxy growth technology on nonplanar substrates, an InGaAs/AlGaAs laser amplifier has been integrated with a 4-mm-long passive waveguide cavity and a QW modulator. Lasing action of the entire structure was achieved by a current of 60 mA flowing through the amplifier section. Mode-locking experiments in which an RF signal was applied to the modulator segment led to nearly-transform-limited pulses with a duration of 4.4 ps and a time-bandwidth product of 0.43.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; laser cavity resonators; laser mode locking; molecular beam epitaxial growth; optical modulation; optical waveguides; optical workshop techniques; semiconductor lasers; 4 mm; 4.4 ps; 60 mA; InGaAs-AlGaAs; QW laser; QW modulator; RF signal; integrated passive waveguide cavity; mode-locking; modulator segment; molecular beam epitaxy growth technology; nearly-transform-limited pulses; nonplanar substrates; picosecond optical pulses; Indium gallium arsenide; Laser mode locking; Molecular beam epitaxial growth; Optical amplifiers; Optical pulses; Optical waveguides; Pulse amplifiers; Pulse modulation; Radiofrequency amplifiers; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
