Title :
Direct Solution of the Boltzmann Transport Equation and Poisson–SchrÖdinger Equation for Nanoscale MOSFETs
Author :
Scaldaferri, Stefano ; Curatola, Gilberto ; Iannaccone, Giuseppe
Author_Institution :
Dialog Semicond. GmbH, Kirchheim
Abstract :
We propose an efficient and fast algorithm to solve the coupled Poisson-Schrodinger and Boltzmann transport equations (BTE) in two dimensions. The BTE is solved in the relaxation time approximation within each subband obtained from the direct solution of the Schrodinger equation. The proposed approach, considering a subband-based transport formalism, allows to fully explore the entire range from drift-diffusion to ballistic regime in nanoscale field-effect transistors. Quantum effects are also fully taken into account by the direct solution of the Schrodinger equation. The model is implemented in the NanoTCAD2D device simulator and used to study the device performance of a 25-nm channel-length MOSFET. The influence of scattering on the electron distribution function and on device characteristics is analyzed in detail.
Keywords :
Boltzmann equation; MOSFET; Poisson equation; Schrodinger equation; semiconductor device models; Boltzmann transport equation; NanoTCAD2D device simulator; Poisson-Schrodinger equation; ballistic regime; direct solution; drift-diffusion; electron distribution function; nanoscale MOSFET; quantum effects; relaxation time approximation; subband-based transport; Boltzmann equation; Computational modeling; Distribution functions; Electronics industry; MOSFETs; Nanoscale devices; Particle scattering; Poisson equations; Quantum computing; Schrodinger equation; Ballistic transport; Boltzmann transport equation; SchrÖdinger equation; modeling; nanoscale MOSFET device;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.906927
