High-performance large-area InGaAs metal-semiconductor-metal photodetectors

Author

Hieronymi, F. ; Böttcher, E.H. ; Dröge, E. ; Kuhl, D. ; Bimberg, D.

Author_Institution

Inst. fuer Festkoperphys. I, Tech. Univ. Berlin, Germany

Volume

5

Issue

8

fYear

1993

Firstpage

910

Lastpage

913

Abstract

The fabrication and characteristics of high-performance large-area InP:Fe/InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors are reported. With a 350- mu m*350- mu m active area, the detectors offer 900-MHz electrical bandwidth and 1.7-pF capacitance at 10-V bias. The respective dark current density is 20 pA/ mu m/sup 2/, an the CW responsivity is 0.4 A/W at 1.3- mu m wavelength. The detectors are therefore ideally suited for applications in the long-wavelength range that require a large detection area and, at the same time, a high bandwidth and low capacitance.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; iron; metal-semiconductor-metal structures; photodetectors; 1.3 micron; 1.7 pF; 10 V; 350 micron; 900 MHz; CW responsivity; IR; InP:Fe-InGaAs:Fe; active area; dark current density; electrical bandwidth; fabrication; high bandwidth; high-performance; large detection area; long-wavelength range; low capacitance; metal-semiconductor-metal photodetectors; Bandwidth; Capacitance; Dark current; Detectors; Epitaxial layers; Fabrication; Indium gallium arsenide; Photodetectors; Telecommunication switching; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.238251

Filename

238251