DocumentCode :
957172
Title :
Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs
Author :
Vasallo, Beatriz G. ; Wichmann, Nicolas ; Bollaert, Sylvain ; Roelens, Yannick ; Cappy, Alain ; González, Tomás ; Pardo, Daniel ; Mateos, Javier
Author_Institution :
Univ. de Salamanca, Salamanca
Volume :
54
Issue :
11
fYear :
2007
Firstpage :
2815
Lastpage :
2822
Abstract :
The static and dynamic behavior of InAlAs/InGaAs double-gate high-electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2-D Monte Carlo simulator. The model allows us to satisfactorily reproduce the experimental performance of this novel device and to go deeply into its physical behavior. A complete comparison between DG and similar standard HEMTs has been performed, and devices with different gate lengths have been analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. We have confirmed that, for very small gate lengths, short-channel effects are less significant in the DG-HEMTs, leading to a better intrinsic dynamic performance. Moreover, the higher values of the transconductance over drain conductance ratio gm /gd, and, especially, the lower gate resistance Rg also provide a significant improvement of the extrinsic fmax.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 2D Monte Carlo simulator; AlInAs-InGaAs; AlInAs-InGaAs - Interface; attenuation; double gate HEMT; double-gate high-electron mobility transistors; drain conductance; dynamic performance; short-channel effects; single gate HEMT; transconductance; Attenuation; Cutoff frequency; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Monte Carlo methods; Performance analysis; Transconductance; Double-gate high-electron mobility transistor (DG-HEMT); Monte Carlo (MC) simulations; dynamic behavior;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.907801
Filename :
4367618
Link To Document :
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