Title :
High-performance monolithic pin-MODFET transimpedance photoreceiver
Author :
Gutierrez-Aitken, A.L. ; Bhattcharya, P. ; Chen, Y.C. ; Pavlidis, D. ; Brock, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The performance characteristics of a transimpedance photoreceiver using a In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1- mu m-gate-length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET grown by MBE have been investigated. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver exhibits a FWHM value of 90 ps, which indicates a bandwidth of approximately 6 GHz and expected 10-Gb/s operation. The transimpedance gain was as high as 55 dB- Omega with an 800- Omega feedback resistor.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 0.1 micron; 1.5 V; 10 Gbit/s; 6 GHz; 800 ohm; 90 ps; In/sub 0.53/Ga/sub 0.47/As; MBE; channel currents; drain bias; extrinsic transconductance values; feedback resistor; monolithic pin-MODFET transimpedance photoreceiver; p-i-n photodiode; performance characteristics; regrown pseudomorphic MODFET; semiconductor growth; temporal response; transimpedance gain; Bandwidth; Epitaxial growth; Etching; Fabrication; Feedback; HEMTs; MODFET circuits; Molecular beam epitaxial growth; PIN photodiodes; Resistors;
Journal_Title :
Photonics Technology Letters, IEEE
