A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect

Author

Wu, W.J. ; Yao, R.H. ; Li, S.H. ; Hu, Y.F. ; Deng, W.L. ; Zheng, X.R.

Author_Institution

South China Univ. of Technol., Guangzhou

Volume

54

Issue

11

fYear

2007

Firstpage

2975

Lastpage

2983

Abstract

Based on a generation-recombination model including the Poole-Frenkel (PF) effect and phonon-assisted tunneling, numerical analysis shows that the logarithm of generation rate for polysilicon thin-film transistors (poly-Si TFTs) working in the leakage region is linear with the square root of lower electric field and approximately linear with higher electric field over a wide temperature range (273-423 K). Therefore, an analytical expression is found to approximate the generation rate. Furthermore, a compact model for poly-Si TFT leakage current including the PF effect is developed in this paper. The proposed model is analytical without numerical calculation, and its parameters can be extracted from experimental data; hence, it is attractive for circuit simulation. The model has been verified by comparing simulated results with experimental data.

Keywords

Poole-Frenkel effect; leakage currents; phonons; thin film transistors; tunnelling; Poole-Frenkel effect; Si - Interface; generation-recombination model; leakage current; numerical analysis; phonon-assisted tunneling; polysilicon thin-film transistors; temperature 273 K to 423 K; Circuit simulation; Dielectric constant; Electron traps; Kelvin; Leakage current; Silicon; Temperature; Thin film transistors; Tunneling; Voltage; Compact model; leakage current; polysilicon thin-film transistors (poly-Si TFTs); the Poole–Frenkel (PF) effect;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.906968

Filename

4367620