Title :
A Physical Model on Scattering at High-κ Dielectric/SiO2 Interface of SiGe p-MOSFETs
Author :
Zhang, X.F. ; Xu, J.P. ; Lai, P.T. ; Li, C.X.
Author_Institution :
Huazhong Univ. of Sci. & Technol., Wuhan
Abstract :
In this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/near the high- K dielectric/SiO2 interface is proposed. Using the Fang-Howard´s variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high- dielectric and interlayer on the hole mobility are discussed.
Keywords :
Ge-Si alloys; MOSFET; high-k dielectric thin films; hole mobility; scattering; silicon compounds; SiGe - Interface; SiO2 - Interface; high-K dielectric/ SiO2 interface; hole mobility; p-MOSFET; scattering mechanisms; CMOS technology; Capacitance; Dielectric devices; Fluctuations; Germanium silicon alloys; MOSFET circuits; Permittivity; Scattering; Senior members; Silicon germanium; High-$kappa$ dielectric; MOSFET; SiGe; mobility; scattering;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.906957
