Title :
Low temperature thermal annealing of arsenic implanted silicon
Author :
Scovell, P.D. ; Young, J.M.
Author_Institution :
Standard Telecommunication Laboratories Limited, Harlow, UK
Abstract :
The annealing of heavily arsenic implanted (100) silicon using low temperature furnace techniques to obtain metastable concentrations of the dopant is described and the activations obtained are compared with those found after laser and electron beam annealing.
Keywords :
annealing; arsenic; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si:As; activations; elemental semiconductor; low temperature furnace techniques; metastable concentrations; thermal annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800426
