Title :
Simple method for evaluating electronic properties at silicon¿sapphire interface
Author_Institution :
ENSERG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ERA CNRS 659, Grenoble, France
Abstract :
Electric characteristics of metal-sapphire-silicon transistors are presented. The insulator of the devices is obtained by thinning to 50¿100 ¿m the sapphire substrate of s.o.s. m.o.s. transistors. Devices allow the determination of electronic mobility ¿n = 40 cm2 V¿1 s¿1, in the inversion layer of the Si-sapphire interface.
Keywords :
field effect integrated circuits; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; SOS MOS transistors; Si sapphire interface; electronic mobility; electronic properties; inversion layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800428
