DocumentCode :
957314
Title :
Bubble circuit fabrication by electrodeposition
Author :
Littwin, Burkhard
Author_Institution :
Siemens AG, Components Division, Munich, Germany.
Volume :
11
Issue :
5
fYear :
1975
fDate :
9/1/1975 12:00:00 AM
Firstpage :
1139
Lastpage :
1141
Abstract :
Bubble domain memory chips with micron dimension patterns have been fabricated by additive electroplating through photoresist windows using the conductor first processing. Etching defines the detector strips and removes the plating base. The various fabrication steps are described and discussed. The uniformity of the plated films is good and gives a reasonable yield. Nonmagnetic underlayers were plated below the NiFe bars. The gap width could be reduced by overplating the photoresist windows. 4 kbit chips have been fabricated with the processes described.
Keywords :
Electrochemical processes; Magnetic bubble device fabrication; Magnetic bubble memories; Additives; Bars; Circuits; Conductive films; Conductors; Etching; Fabrication; Gold; Magnetic films; Resists;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1975.1058937
Filename :
1058937
Link To Document :
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